BXT210N02M BRIDGELUX
Виробник: BRIDGELUX
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 6.8A; Idm: 27.2A; 1.6W; SOT23
Kind of channel: enhancement
Type of transistor: N-MOSFET
Kind of package: reel
Mounting: SMD
Polarisation: unipolar
Gate charge: 12.1nC
On-state resistance: 21mΩ
Power dissipation: 1.6W
Drain current: 6.8A
Gate-source voltage: ±12V
Drain-source voltage: 20V
Pulsed drain current: 27.2A
Case: SOT23
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 6.8A; Idm: 27.2A; 1.6W; SOT23
Kind of channel: enhancement
Type of transistor: N-MOSFET
Kind of package: reel
Mounting: SMD
Polarisation: unipolar
Gate charge: 12.1nC
On-state resistance: 21mΩ
Power dissipation: 1.6W
Drain current: 6.8A
Gate-source voltage: ±12V
Drain-source voltage: 20V
Pulsed drain current: 27.2A
Case: SOT23
на замовлення 11884 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна |
|---|---|
| 22+ | 20.41 грн |
| 33+ | 12.52 грн |
| 66+ | 6.26 грн |
| 110+ | 3.76 грн |
| 250+ | 2.50 грн |
| 1000+ | 2.06 грн |
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Технічний опис BXT210N02M BRIDGELUX
Category: SMD N channel transistors, Description: Transistor: N-MOSFET; unipolar; 20V; 6.8A; Idm: 27.2A; 1.6W; SOT23, Kind of channel: enhancement, Type of transistor: N-MOSFET, Kind of package: reel, Mounting: SMD, Polarisation: unipolar, Gate charge: 12.1nC, On-state resistance: 21mΩ, Power dissipation: 1.6W, Drain current: 6.8A, Gate-source voltage: ±12V, Drain-source voltage: 20V, Pulsed drain current: 27.2A, Case: SOT23.