BXT230P03B BRIDGELUX
Виробник: BRIDGELUX
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -7A; Idm: -40A; 3.9W; SOP8
Pulsed drain current: -40A
Power dissipation: 3.9W
Gate charge: 28nC
Polarisation: unipolar
Drain current: -7A
Kind of channel: enhancement
Drain-source voltage: -30V
Type of transistor: P-MOSFET
Gate-source voltage: ±20V
Kind of package: reel; tape
Case: SOP8
On-state resistance: 34mΩ
Mounting: SMD
| Кількість | Ціна без ПДВ |
|---|---|
| 20+ | 23.27 грн |
| 24+ | 17.70 грн |
| 28+ | 15.12 грн |
| 100+ | 12.13 грн |
| 250+ | 10.80 грн |
| 500+ | 9.06 грн |
| 1000+ | 8.14 грн |
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Технічний опис BXT230P03B BRIDGELUX
Category: SMD P channel transistors, Description: Transistor: P-MOSFET; unipolar; -30V; -7A; Idm: -40A; 3.9W; SOP8, Pulsed drain current: -40A, Power dissipation: 3.9W, Gate charge: 28nC, Polarisation: unipolar, Drain current: -7A, Kind of channel: enhancement, Drain-source voltage: -30V, Type of transistor: P-MOSFET, Gate-source voltage: ±20V, Kind of package: reel; tape, Case: SOP8, On-state resistance: 34mΩ, Mounting: SMD.


