BXT280N02B BRIDGELUX
Виробник: BRIDGELUX
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 20V; 4A; Idm: 24A; 1.6W; SOP8
Polarisation: unipolar
Mounting: SMD
Pulsed drain current: 24A
Power dissipation: 1.6W
Gate charge: 5.5nC
Drain current: 4A
Kind of channel: enhancement
Drain-source voltage: 20V
Type of transistor: N-MOSFET x2
Gate-source voltage: ±12V
Kind of package: reel; tape
Case: SOP8
On-state resistance: 38mΩ
| Кількість | Ціна без ПДВ |
|---|---|
| 32+ | 14.32 грн |
| 39+ | 10.72 грн |
| 46+ | 9.21 грн |
| 100+ | 7.35 грн |
| 250+ | 6.59 грн |
| 500+ | 5.51 грн |
| 1000+ | 4.95 грн |
| 2000+ | 4.38 грн |
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Технічний опис BXT280N02B BRIDGELUX
Category: Multi channel transistors, Description: Transistor: N-MOSFET x2; unipolar; 20V; 4A; Idm: 24A; 1.6W; SOP8, Polarisation: unipolar, Mounting: SMD, Pulsed drain current: 24A, Power dissipation: 1.6W, Gate charge: 5.5nC, Drain current: 4A, Kind of channel: enhancement, Drain-source voltage: 20V, Type of transistor: N-MOSFET x2, Gate-source voltage: ±12V, Kind of package: reel; tape, Case: SOP8, On-state resistance: 38mΩ.