BXT330N02M BRIDGELUX
Виробник: BRIDGELUX
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 6A; Idm: 24A; 1.25W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 6A
Pulsed drain current: 24A
Power dissipation: 1.25W
Case: SOT23
Gate-source voltage: ±10V
On-state resistance: 33mΩ
Mounting: SMD
Gate charge: 11nC
Kind of package: reel
Kind of channel: enhancement
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Технічний опис BXT330N02M BRIDGELUX
Category: SMD N channel transistors, Description: Transistor: N-MOSFET; unipolar; 20V; 6A; Idm: 24A; 1.25W; SOT23, Type of transistor: N-MOSFET, Polarisation: unipolar, Drain-source voltage: 20V, Drain current: 6A, Pulsed drain current: 24A, Power dissipation: 1.25W, Case: SOT23, Gate-source voltage: ±10V, On-state resistance: 33mΩ, Mounting: SMD, Gate charge: 11nC, Kind of package: reel, Kind of channel: enhancement.