BXT330N02M BRIDGELUX
Виробник: BRIDGELUX
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 6A; Idm: 24A; 1.25W; SOT23
Kind of channel: enhancement
Type of transistor: N-MOSFET
Kind of package: reel
Mounting: SMD
Polarisation: unipolar
Gate charge: 11nC
On-state resistance: 33mΩ
Power dissipation: 1.25W
Drain current: 6A
Gate-source voltage: ±10V
Drain-source voltage: 20V
Pulsed drain current: 24A
Case: SOT23
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 6A; Idm: 24A; 1.25W; SOT23
Kind of channel: enhancement
Type of transistor: N-MOSFET
Kind of package: reel
Mounting: SMD
Polarisation: unipolar
Gate charge: 11nC
On-state resistance: 33mΩ
Power dissipation: 1.25W
Drain current: 6A
Gate-source voltage: ±10V
Drain-source voltage: 20V
Pulsed drain current: 24A
Case: SOT23
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Технічний опис BXT330N02M BRIDGELUX
Category: SMD N channel transistors, Description: Transistor: N-MOSFET; unipolar; 20V; 6A; Idm: 24A; 1.25W; SOT23, Kind of channel: enhancement, Type of transistor: N-MOSFET, Kind of package: reel, Mounting: SMD, Polarisation: unipolar, Gate charge: 11nC, On-state resistance: 33mΩ, Power dissipation: 1.25W, Drain current: 6A, Gate-source voltage: ±10V, Drain-source voltage: 20V, Pulsed drain current: 24A, Case: SOT23.