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BXT600P03M

BXT600P03M BRIDGELUX

BXT600P03M.pdf Виробник: BRIDGELUX
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -2.7A; Idm: -16.4A; 1.51W
Drain current: -2.7A
Gate charge: 6.8nC
On-state resistance: 85mΩ
Power dissipation: 1.51W
Gate-source voltage: ±20V
Kind of channel: enhancement
Type of transistor: P-MOSFET
Kind of package: reel; tape
Mounting: SMD
Case: SOT23-3
Polarisation: unipolar
Drain-source voltage: -30V
Pulsed drain current: -16.4A
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Технічний опис BXT600P03M BRIDGELUX

Category: SMD P channel transistors, Description: Transistor: P-MOSFET; unipolar; -30V; -2.7A; Idm: -16.4A; 1.51W, Drain current: -2.7A, Gate charge: 6.8nC, On-state resistance: 85mΩ, Power dissipation: 1.51W, Gate-source voltage: ±20V, Kind of channel: enhancement, Type of transistor: P-MOSFET, Kind of package: reel; tape, Mounting: SMD, Case: SOT23-3, Polarisation: unipolar, Drain-source voltage: -30V, Pulsed drain current: -16.4A.