BXT600P03M BRIDGELUX
Виробник: BRIDGELUX
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -2.7A; Idm: -16.4A; 1.51W
Type of transistor: P-MOSFET
Kind of package: reel; tape
Case: SOT23-3
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -2.7A
Pulsed drain current: -16.4A
Gate charge: 6.8nC
On-state resistance: 85mΩ
Power dissipation: 1.51W
Gate-source voltage: ±20V
Kind of channel: enhancement
Mounting: SMD
| Кількість | Ціна |
|---|---|
| 28+ | 16.41 грн |
| 56+ | 7.62 грн |
| 80+ | 5.32 грн |
| 100+ | 4.24 грн |
| 250+ | 3.78 грн |
| 500+ | 3.18 грн |
| 1000+ | 2.86 грн |
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Технічний опис BXT600P03M BRIDGELUX
Category: SMD P channel transistors, Description: Transistor: P-MOSFET; unipolar; -30V; -2.7A; Idm: -16.4A; 1.51W, Type of transistor: P-MOSFET, Kind of package: reel; tape, Case: SOT23-3, Polarisation: unipolar, Drain-source voltage: -30V, Drain current: -2.7A, Pulsed drain current: -16.4A, Gate charge: 6.8nC, On-state resistance: 85mΩ, Power dissipation: 1.51W, Gate-source voltage: ±20V, Kind of channel: enhancement, Mounting: SMD.