BXT600P03M BRIDGELUX
Виробник: BRIDGELUXCategory: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -2.7A; Idm: -16.4A; 1.51W
Drain current: -2.7A
Gate charge: 6.8nC
On-state resistance: 85mΩ
Power dissipation: 1.51W
Gate-source voltage: ±20V
Kind of channel: enhancement
Type of transistor: P-MOSFET
Kind of package: reel; tape
Mounting: SMD
Case: SOT23-3
Polarisation: unipolar
Drain-source voltage: -30V
Pulsed drain current: -16.4A
на замовлення 3000 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна |
|---|---|
| 28+ | 15.97 грн |
| 57+ | 7.33 грн |
| 81+ | 5.11 грн |
| 102+ | 4.08 грн |
| 250+ | 3.64 грн |
| 500+ | 3.06 грн |
| 1000+ | 2.75 грн |
| 3000+ | 2.43 грн |
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Технічний опис BXT600P03M BRIDGELUX
Category: SMD P channel transistors, Description: Transistor: P-MOSFET; unipolar; -30V; -2.7A; Idm: -16.4A; 1.51W, Drain current: -2.7A, Gate charge: 6.8nC, On-state resistance: 85mΩ, Power dissipation: 1.51W, Gate-source voltage: ±20V, Kind of channel: enhancement, Type of transistor: P-MOSFET, Kind of package: reel; tape, Mounting: SMD, Case: SOT23-3, Polarisation: unipolar, Drain-source voltage: -30V, Pulsed drain current: -16.4A.