BXT600P03M BRIDGELUX
Виробник: BRIDGELUX
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -2.7A; Idm: -16.4A; 1.51W
Pulsed drain current: -16.4A
Power dissipation: 1.51W
Gate charge: 6.8nC
Polarisation: unipolar
Drain current: -2.7A
Kind of channel: enhancement
Drain-source voltage: -30V
Type of transistor: P-MOSFET
Gate-source voltage: ±20V
Kind of package: reel; tape
Case: SOT23-3
On-state resistance: 85mΩ
Mounting: SMD
| Кількість | Ціна без ПДВ |
|---|---|
| 28+ | 16.11 грн |
| 55+ | 7.64 грн |
| 79+ | 5.28 грн |
| 100+ | 4.23 грн |
| 250+ | 3.77 грн |
| 500+ | 3.17 грн |
| 1000+ | 2.85 грн |
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Технічний опис BXT600P03M BRIDGELUX
Category: SMD P channel transistors, Description: Transistor: P-MOSFET; unipolar; -30V; -2.7A; Idm: -16.4A; 1.51W, Pulsed drain current: -16.4A, Power dissipation: 1.51W, Gate charge: 6.8nC, Polarisation: unipolar, Drain current: -2.7A, Kind of channel: enhancement, Drain-source voltage: -30V, Type of transistor: P-MOSFET, Gate-source voltage: ±20V, Kind of package: reel; tape, Case: SOT23-3, On-state resistance: 85mΩ, Mounting: SMD.