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BXW10M1K2H

BXW10M1K2H BRIDGELUX

pVersion=0046&contRep=ZT&docId=005056AB281E1EDCB9E316B7C3D100D2&compId=BXW10M1K2H.pdf?ci_sign=e26a0cc4e4bf5363b0f64eff9858dc8fb37c89c0 Виробник: BRIDGELUX
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 10A; Idm: 40A; 80.6W
Polarisation: unipolar
Case: TO247-3
Gate-source voltage: -3...20V
Gate charge: 29nC
On-state resistance: 610mΩ
Drain current: 10A
Pulsed drain current: 40A
Power dissipation: 80.6W
Drain-source voltage: 1.2kV
Kind of package: tube
Kind of channel: enhancement
Type of transistor: N-MOSFET
Technology: SiC
Mounting: THT
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Технічний опис BXW10M1K2H BRIDGELUX

Category: THT N channel transistors, Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 10A; Idm: 40A; 80.6W, Polarisation: unipolar, Case: TO247-3, Gate-source voltage: -3...20V, Gate charge: 29nC, On-state resistance: 610mΩ, Drain current: 10A, Pulsed drain current: 40A, Power dissipation: 80.6W, Drain-source voltage: 1.2kV, Kind of package: tube, Kind of channel: enhancement, Type of transistor: N-MOSFET, Technology: SiC, Mounting: THT.