Технічний опис BY229B-800HE3/81 Vishay
Description: DIODE STANDARD 800V 8A TO263AB, Packaging: Tape & Reel (TR), Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB, Mounting Type: Surface Mount, Speed: Fast Recovery =< 500ns, > 200mA (Io), Reverse Recovery Time (trr): 145 ns, Technology: Standard, Current - Average Rectified (Io): 8A, Supplier Device Package: TO-263AB (D2PAK), Operating Temperature - Junction: -40°C ~ 150°C, Grade: Automotive, Part Status: Obsolete, Voltage - DC Reverse (Vr) (Max): 800 V, Voltage - Forward (Vf) (Max) @ If: 1.85 V @ 20 A, Current - Reverse Leakage @ Vr: 10 µA @ 800 V, Qualification: AEC-Q101.
Інші пропозиції BY229B-800HE3/81
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BY229B-800HE3/81 | Виробник : Vishay General Semiconductor - Diodes Division |
 Description: DIODE STANDARD 800V 8A TO263ABPackaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 145 ns Technology: Standard Current - Average Rectified (Io): 8A Supplier Device Package: TO-263AB (D2PAK) Operating Temperature - Junction: -40°C ~ 150°C Grade: Automotive Part Status: Obsolete Voltage - DC Reverse (Vr) (Max): 800 V Voltage - Forward (Vf) (Max) @ If: 1.85 V @ 20 A Current - Reverse Leakage @ Vr: 10 µA @ 800 V Qualification: AEC-Q101 |
товару немає в наявності |
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| BY229B-800HE3/81 | Виробник : Vishay Semiconductors |
Diodes - General Purpose, Power, Switching 8.0A 800 Volt 145ns 100 Amp IFSM |
товару немає в наявності |