BY251-CT Diotec Semiconductor
Виробник: Diotec SemiconductorDescription: DIODE GEN PURP 200V 3A DO201
Packaging: Strip
Package / Case: DO-201AA, DO-27, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 1.5 µs
Technology: Standard
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-201
Operating Temperature - Junction: -50°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 3 A
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
на замовлення 1675 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 25+ | 17.49 грн |
| 50+ | 12.47 грн |
| 100+ | 10.75 грн |
| 250+ | 7.2 грн |
| 500+ | 6 грн |
| 1000+ | 5.27 грн |
| 1500+ | 4.81 грн |
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Технічний опис BY251-CT Diotec Semiconductor
Description: DIODE GEN PURP 200V 3A DO201, Packaging: Strip, Package / Case: DO-201AA, DO-27, Axial, Mounting Type: Through Hole, Speed: Standard Recovery >500ns, > 200mA (Io), Reverse Recovery Time (trr): 1.5 µs, Technology: Standard, Current - Average Rectified (Io): 3A, Supplier Device Package: DO-201, Operating Temperature - Junction: -50°C ~ 150°C, Part Status: Active, Voltage - DC Reverse (Vr) (Max): 200 V, Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 3 A, Current - Reverse Leakage @ Vr: 5 µA @ 200 V.