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BY25Q16AWXIG(R)

BY25Q16AWXIG(R) BYTe Semiconductor

BY25Q16AW.pdf Виробник: BYTe Semiconductor
Description: 16 MBIT, WIDE VCC (1.7V TO 3.6V)
Packaging: Tape & Reel (TR)
Package / Case: 8-XFDFN Exposed Pad
Mounting Type: Surface Mount
Memory Size: 16Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.65V ~ 3.6V
Technology: FLASH - NOR (SLC)
Clock Frequency: 100 MHz
Memory Format: FLASH
Supplier Device Package: 8-USON (2x3)
Write Cycle Time - Word, Page: 3ms
Memory Interface: SPI - Quad I/O
Access Time: 12 ns
Memory Organization: 2M x 8
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Технічний опис BY25Q16AWXIG(R) BYTe Semiconductor

Description: 16 MBIT, WIDE VCC (1.7V TO 3.6V), Packaging: Tape & Reel (TR), Package / Case: 8-XFDFN Exposed Pad, Mounting Type: Surface Mount, Memory Size: 16Mbit, Memory Type: Non-Volatile, Operating Temperature: -40°C ~ 85°C (TA), Voltage - Supply: 1.65V ~ 3.6V, Technology: FLASH - NOR (SLC), Clock Frequency: 100 MHz, Memory Format: FLASH, Supplier Device Package: 8-USON (2x3), Write Cycle Time - Word, Page: 3ms, Memory Interface: SPI - Quad I/O, Access Time: 12 ns, Memory Organization: 2M x 8.