BY25Q40BSTJG(T) BYTe Semiconductor
Виробник: BYTe SemiconductorDescription: 4 MBIT, 3.0V (2.7V TO 3.6V), -40
Packaging: Tube
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Memory Size: 4Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 105°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR (SLC)
Clock Frequency: 108 MHz
Memory Format: FLASH
Supplier Device Package: 8-SOP
Write Cycle Time - Word, Page: 60µs, 4ms
Memory Interface: SPI - Quad I/O, QPI
Access Time: 7 ns
Memory Organization: 512K x 8
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Технічний опис BY25Q40BSTJG(T) BYTe Semiconductor
Description: 4 MBIT, 3.0V (2.7V TO 3.6V), -40, Packaging: Tube, Package / Case: 8-SOIC (0.154", 3.90mm Width), Mounting Type: Surface Mount, Memory Size: 4Mbit, Memory Type: Non-Volatile, Operating Temperature: -40°C ~ 105°C (TA), Voltage - Supply: 2.7V ~ 3.6V, Technology: FLASH - NOR (SLC), Clock Frequency: 108 MHz, Memory Format: FLASH, Supplier Device Package: 8-SOP, Write Cycle Time - Word, Page: 60µs, 4ms, Memory Interface: SPI - Quad I/O, QPI, Access Time: 7 ns, Memory Organization: 512K x 8.