BY25Q80ESSIG(T) BYTe Semiconductor
Виробник: BYTe SemiconductorDescription: 8 MBIT, 3.0V (2.7V TO 3.6V), -40
Packaging: Tube
Package / Case: 8-SOIC (0.209", 5.30mm Width)
Mounting Type: Surface Mount
Memory Size: 8Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR (SLC)
Clock Frequency: 120 MHz
Memory Format: FLASH
Supplier Device Package: 8-SOP
Write Cycle Time - Word, Page: 55µs, 2ms
Memory Interface: SPI - Quad I/O
Access Time: 7 ns
Memory Organization: 1M x 8
на замовлення 19000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 10+ | 28.89 грн |
| 12+ | 23.78 грн |
| 95+ | 17.73 грн |
| 285+ | 15.45 грн |
| 570+ | 13.08 грн |
| 1045+ | 10.1 грн |
| 2565+ | 9.06 грн |
| 5035+ | 8.48 грн |
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Технічний опис BY25Q80ESSIG(T) BYTe Semiconductor
Description: 8 MBIT, 3.0V (2.7V TO 3.6V), -40, Packaging: Tube, Package / Case: 8-SOIC (0.209", 5.30mm Width), Mounting Type: Surface Mount, Memory Size: 8Mbit, Memory Type: Non-Volatile, Operating Temperature: -40°C ~ 85°C (TA), Voltage - Supply: 2.7V ~ 3.6V, Technology: FLASH - NOR (SLC), Clock Frequency: 120 MHz, Memory Format: FLASH, Supplier Device Package: 8-SOP, Write Cycle Time - Word, Page: 55µs, 2ms, Memory Interface: SPI - Quad I/O, Access Time: 7 ns, Memory Organization: 1M x 8.