BY29G1GFSBIG(Y) BYTe Semiconductor
Виробник: BYTe Semiconductor
Description: 1 GBIT, 3.0V (2.7V TO 3.6V), -40
Packaging: Tray
Package / Case: 64-LBGA
Mounting Type: Surface Mount
Memory Size: 1Gbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR (SLC)
Memory Format: FLASH
Supplier Device Package: 64-TFBGA (11x13)
Memory Interface: CFI
Memory Organization: 128M x 8
Description: 1 GBIT, 3.0V (2.7V TO 3.6V), -40
Packaging: Tray
Package / Case: 64-LBGA
Mounting Type: Surface Mount
Memory Size: 1Gbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR (SLC)
Memory Format: FLASH
Supplier Device Package: 64-TFBGA (11x13)
Memory Interface: CFI
Memory Organization: 128M x 8
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Технічний опис BY29G1GFSBIG(Y) BYTe Semiconductor
Description: 1 GBIT, 3.0V (2.7V TO 3.6V), -40, Packaging: Tray, Package / Case: 64-LBGA, Mounting Type: Surface Mount, Memory Size: 1Gbit, Memory Type: Non-Volatile, Operating Temperature: -40°C ~ 85°C (TA), Voltage - Supply: 2.7V ~ 3.6V, Technology: FLASH - NOR (SLC), Memory Format: FLASH, Supplier Device Package: 64-TFBGA (11x13), Memory Interface: CFI, Memory Organization: 128M x 8.