BY880-100-CT Diotec Semiconductor
Виробник: Diotec Semiconductor
Description: DIODE GEN PURP 100V 8A DO201
Current - Reverse Leakage @ Vr: 5 µA @ 100 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 8 A
Voltage - DC Reverse (Vr) (Max): 100 V
Part Status: Active
Operating Temperature - Junction: -50°C ~ 175°C
Supplier Device Package: DO-201
Current - Average Rectified (Io): 8A
Technology: Standard
Reverse Recovery Time (trr): 1.5 µs
Speed: Standard Recovery >500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: DO-201AA, DO-27, Axial
Packaging: Strip
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Технічний опис BY880-100-CT Diotec Semiconductor
Description: DIODE GEN PURP 100V 8A DO201, Current - Reverse Leakage @ Vr: 5 µA @ 100 V, Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 8 A, Voltage - DC Reverse (Vr) (Max): 100 V, Part Status: Active, Operating Temperature - Junction: -50°C ~ 175°C, Supplier Device Package: DO-201, Current - Average Rectified (Io): 8A, Technology: Standard, Reverse Recovery Time (trr): 1.5 µs, Speed: Standard Recovery >500ns, > 200mA (Io), Mounting Type: Through Hole, Package / Case: DO-201AA, DO-27, Axial, Packaging: Strip.