BYM10-1000HE3_A/H Vishay General Semiconductor - Diodes Division
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE AVALANCHE 1KV 1A DO213AB
Qualification: AEC-Q101
Current - Reverse Leakage @ Vr: 10 µA @ 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 1 A
Voltage - DC Reverse (Vr) (Max): 1000 V
Grade: Automotive
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: DO-213AB (MELF)
Current - Average Rectified (Io): 1A
Capacitance @ Vr, F: 8pF @ 4V, 1MHz
Technology: Standard
Speed: Standard Recovery >500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-213AB, MELF
Packaging: Tape & Reel (TR)
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Технічний опис BYM10-1000HE3_A/H Vishay General Semiconductor - Diodes Division
Description: DIODE AVALANCHE 1KV 1A DO213AB, Qualification: AEC-Q101, Current - Reverse Leakage @ Vr: 10 µA @ 1000 V, Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 1 A, Voltage - DC Reverse (Vr) (Max): 1000 V, Grade: Automotive, Operating Temperature - Junction: -65°C ~ 175°C, Supplier Device Package: DO-213AB (MELF), Current - Average Rectified (Io): 1A, Capacitance @ Vr, F: 8pF @ 4V, 1MHz, Technology: Standard, Speed: Standard Recovery >500ns, > 200mA (Io), Mounting Type: Surface Mount, Package / Case: DO-213AB, MELF, Packaging: Tape & Reel (TR).