Технічний опис BYM10-1000HE3_A/H Vishay
Description: DIODE AVALANCHE 1KV 1A DO213AB, Packaging: Tape & Reel (TR), Package / Case: DO-213AB, MELF, Mounting Type: Surface Mount, Speed: Standard Recovery >500ns, > 200mA (Io), Technology: Standard, Capacitance @ Vr, F: 8pF @ 4V, 1MHz, Current - Average Rectified (Io): 1A, Supplier Device Package: DO-213AB (MELF), Operating Temperature - Junction: -65°C ~ 175°C, Grade: Automotive, Voltage - DC Reverse (Vr) (Max): 1000 V, Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 1 A, Current - Reverse Leakage @ Vr: 10 µA @ 1000 V, Qualification: AEC-Q101.
Інші пропозиції BYM10-1000HE3_A/H
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
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BYM10-1000HE3_A/H | Виробник : Vishay General Semiconductor - Diodes Division |
Description: DIODE AVALANCHE 1KV 1A DO213AB Packaging: Tape & Reel (TR) Package / Case: DO-213AB, MELF Mounting Type: Surface Mount Speed: Standard Recovery >500ns, > 200mA (Io) Technology: Standard Capacitance @ Vr, F: 8pF @ 4V, 1MHz Current - Average Rectified (Io): 1A Supplier Device Package: DO-213AB (MELF) Operating Temperature - Junction: -65°C ~ 175°C Grade: Automotive Voltage - DC Reverse (Vr) (Max): 1000 V Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 1 A Current - Reverse Leakage @ Vr: 10 µA @ 1000 V Qualification: AEC-Q101 |
товару немає в наявності |