Технічний опис BYT52M EIC Semiconductor
Category: THT universal diodes, Description: Diode: rectifying; THT; 1kV; 1A; Ammo Pack; Ifsm: 50A; SOD57; 200ns, Type of diode: rectifying, Mounting: THT, Max. off-state voltage: 1kV, Load current: 1A, Semiconductor structure: single diode, Features of semiconductor devices: avalanche breakdown effect; glass passivated, Kind of package: Ammo Pack, Max. forward impulse current: 50A, Case: SOD57, Max. forward voltage: 1.3V, Reverse recovery time: 200ns.
Інші пропозиції BYT52M
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ |
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BYT52M | Виробник : VISHAY |
 Category: THT universal diodesDescription: Diode: rectifying; THT; 1kV; 1A; Ammo Pack; Ifsm: 50A; SOD57; 200ns Type of diode: rectifying Mounting: THT Max. off-state voltage: 1kV Load current: 1A Semiconductor structure: single diode Features of semiconductor devices: avalanche breakdown effect; glass passivated Kind of package: Ammo Pack Max. forward impulse current: 50A Case: SOD57 Max. forward voltage: 1.3V Reverse recovery time: 200ns |
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