BYV10X-600P127 NXP USA Inc.
Виробник: NXP USA Inc.
Description: DIODE GEN PURP 600V 10A TO220F
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 2 V @ 10 A
Voltage - DC Reverse (Vr) (Max): 600 V
Part Status: Active
Operating Temperature - Junction: 175°C
Supplier Device Package: TO-220F
Current - Average Rectified (Io): 10A
Technology: Standard
Reverse Recovery Time (trr): 50 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: TO-220-2 Full Pack
Packaging: Bulk
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Технічний опис BYV10X-600P127 NXP USA Inc.
Description: DIODE GEN PURP 600V 10A TO220F, Current - Reverse Leakage @ Vr: 10 µA @ 600 V, Voltage - Forward (Vf) (Max) @ If: 2 V @ 10 A, Voltage - DC Reverse (Vr) (Max): 600 V, Part Status: Active, Operating Temperature - Junction: 175°C, Supplier Device Package: TO-220F, Current - Average Rectified (Io): 10A, Technology: Standard, Reverse Recovery Time (trr): 50 ns, Speed: Fast Recovery =< 500ns, > 200mA (Io), Mounting Type: Through Hole, Package / Case: TO-220-2 Full Pack, Packaging: Bulk.