BYV26A-TR Vishay General Semiconductor - Diodes Division
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE AVALANCHE 200V 1A SOD57
Packaging: Tape & Reel (TR)
Package / Case: SOD-57, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 30 ns
Technology: Avalanche
Current - Average Rectified (Io): 1A
Supplier Device Package: SOD-57
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 2.5 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
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Технічний опис BYV26A-TR Vishay General Semiconductor - Diodes Division
Description: DIODE AVALANCHE 200V 1A SOD57, Packaging: Tape & Reel (TR), Package / Case: SOD-57, Axial, Mounting Type: Through Hole, Speed: Fast Recovery =< 500ns, > 200mA (Io), Reverse Recovery Time (trr): 30 ns, Technology: Avalanche, Current - Average Rectified (Io): 1A, Supplier Device Package: SOD-57, Operating Temperature - Junction: -55°C ~ 175°C, Part Status: Active, Voltage - DC Reverse (Vr) (Max): 200 V, Voltage - Forward (Vf) (Max) @ If: 2.5 V @ 1 A, Current - Reverse Leakage @ Vr: 5 µA @ 200 V.
Інші пропозиції BYV26A-TR
| Фото | Назва | Виробник | Інформація |
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Ціна |
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BYV26A-TR | Виробник : Vishay Semiconductors |
Rectifiers 1.0 Amp 200 Volt 30 Amp IFSM |
товару немає в наявності |
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| BYV26A TR | Виробник : FAGOR |
Category: THT universal diodes Description: Diode: rectifying; THT; 200V; 1A; reel; Ifsm: 30A; DO204AL,DO41; 30ns Type of diode: rectifying Mounting: THT Max. off-state voltage: 200V Load current: 1A Semiconductor structure: single diode Features of semiconductor devices: glass passivated; ultrafast switching Kind of package: reel Max. forward impulse current: 30A Case: DO41; DO204AL Max. forward voltage: 1.3V Max. load current: 10A Reverse recovery time: 30ns |
товару немає в наявності |