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BZD17C16P RHG

BZD17C16P RHG Taiwan Semiconductor Corporation

BZD17C%20SERIES_L2103.pdf
Виробник: Taiwan Semiconductor Corporation
Description: DIODE ZENER 16V 800MW SUB SMA
Current - Reverse Leakage @ Vr: 1 µA @ 12 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Power - Max: 800 mW
Supplier Device Package: Sub SMA
Impedance (Max) (Zzt): 15 Ohms
Voltage - Zener (Nom) (Vz): 16 V
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: DO-219AB
Tolerance: ±5.625%
Packaging: Tape & Reel (TR)
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Технічний опис BZD17C16P RHG Taiwan Semiconductor Corporation

Description: DIODE ZENER 16V 800MW SUB SMA, Current - Reverse Leakage @ Vr: 1 µA @ 12 V, Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA, Power - Max: 800 mW, Supplier Device Package: Sub SMA, Impedance (Max) (Zzt): 15 Ohms, Voltage - Zener (Nom) (Vz): 16 V, Operating Temperature: -55°C ~ 175°C (TJ), Mounting Type: Surface Mount, Package / Case: DO-219AB, Tolerance: ±5.625%, Packaging: Tape & Reel (TR).