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BZT52B36-HE3_A-18

BZT52B36-HE3_A-18 Vishay General Semiconductor - Diodes Division

bzt52_series.pdf
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 36V 410MW SOD123
Current - Reverse Leakage @ Vr: 100 nA @ 27 V
Power - Max: 300 mW
Part Status: Active
Supplier Device Package: SOD-123
Impedance (Max) (Zzt): 87 Ohms
Voltage - Zener (Nom) (Vz): 36 V
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOD-123
Tolerance: ±2%
Packaging: Tape & Reel (TR)
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Технічний опис BZT52B36-HE3_A-18 Vishay General Semiconductor - Diodes Division

Description: DIODE ZENER 36V 410MW SOD123, Current - Reverse Leakage @ Vr: 100 nA @ 27 V, Power - Max: 300 mW, Part Status: Active, Supplier Device Package: SOD-123, Impedance (Max) (Zzt): 87 Ohms, Voltage - Zener (Nom) (Vz): 36 V, Operating Temperature: 150°C (TJ), Mounting Type: Surface Mount, Package / Case: SOD-123, Tolerance: ±2%, Packaging: Tape & Reel (TR).