CAB5R0A23GM4 Wolfspeed, Inc.
Виробник: Wolfspeed, Inc.Description: MOSFET 2N-CH 2300V 150A
Packaging: Box
Package / Case: Module
Mounting Type: Chassis Mount
Configuration: 2 N-Channel (Half Bridge)
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: Silicon Carbide (SiC)
Power - Max: 710W
Drain to Source Voltage (Vdss): 2300V (2.3kV)
Current - Continuous Drain (Id) @ 25°C: 150A
Input Capacitance (Ciss) (Max) @ Vds: 36600pF @ 1.5kV
Rds On (Max) @ Id, Vgs: 7mOhm @ 240A, 15V
Gate Charge (Qg) (Max) @ Vgs: 880nC @ 15V
FET Feature: Silicon Carbide (SiC)
Vgs(th) (Max) @ Id: 4V @ 114mA
на замовлення 30 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 1+ | 30835.76 грн |
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Технічний опис CAB5R0A23GM4 Wolfspeed, Inc.
Description: MOSFET 2N-CH 2300V 150A, Packaging: Box, Package / Case: Module, Mounting Type: Chassis Mount, Configuration: 2 N-Channel (Half Bridge), Operating Temperature: -40°C ~ 150°C (TJ), Technology: Silicon Carbide (SiC), Power - Max: 710W, Drain to Source Voltage (Vdss): 2300V (2.3kV), Current - Continuous Drain (Id) @ 25°C: 150A, Input Capacitance (Ciss) (Max) @ Vds: 36600pF @ 1.5kV, Rds On (Max) @ Id, Vgs: 7mOhm @ 240A, 15V, Gate Charge (Qg) (Max) @ Vgs: 880nC @ 15V, FET Feature: Silicon Carbide (SiC), Vgs(th) (Max) @ Id: 4V @ 114mA.