CDMS24740-170 SL Central Semiconductor Corp
Виробник: Central Semiconductor CorpDescription: 1700V THROUGH-HOLE MOSFET N-CHAN
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 26A (Tj)
Rds On (Max) @ Id, Vgs: 40mOhm @ 8A, 15V
Power Dissipation (Max): 28W (Tj)
Vgs(th) (Max) @ Id: 2.4V @ 5mA (Typ)
Supplier Device Package: TO-247
Drive Voltage (Max Rds On, Min Rds On): 15V
Vgs (Max): 20V
Drain to Source Voltage (Vdss): 1700 V
Input Capacitance (Ciss) (Max) @ Vds: 3500 pF @ 200 V
на замовлення 24 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 1+ | 2602.75 грн |
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Технічний опис CDMS24740-170 SL Central Semiconductor Corp
Description: 1700V THROUGH-HOLE MOSFET N-CHAN, Packaging: Tube, Package / Case: TO-247-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 175°C (TJ), Technology: SiCFET (Silicon Carbide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 26A (Tj), Rds On (Max) @ Id, Vgs: 40mOhm @ 8A, 15V, Power Dissipation (Max): 28W (Tj), Vgs(th) (Max) @ Id: 2.4V @ 5mA (Typ), Supplier Device Package: TO-247, Drive Voltage (Max Rds On, Min Rds On): 15V, Vgs (Max): 20V, Drain to Source Voltage (Vdss): 1700 V, Input Capacitance (Ciss) (Max) @ Vds: 3500 pF @ 200 V.