CIG22B4R7MNE Samsung Electro-Mechanics
Виробник: Samsung Electro-Mechanics
Description: FIXED IND 4.7UH 1A 250 MOHM SMD
Current Rating (Amps): 1 A
Inductance: 4.7 µH
Part Status: Obsolete
Height - Seated (Max): 0.031" (0.80mm)
Supplier Device Package: 1008 (2520 Metric)
Inductance Frequency - Test: 1 MHz
Current - Saturation (Isat): 650mA
DC Resistance (DCR): 250mOhm
Operating Temperature: -40°C ~ 125°C
Type: Multilayer
Shielding: Shielded
Mounting Type: Surface Mount
Size / Dimension: 0.098" L x 0.079" W (2.50mm x 2.00mm)
Package / Case: 1008 (2520 Metric)
Tolerance: ±20%
Packaging: Tape & Reel (TR)
Відгуки про товар
Написати відгук
Технічний опис CIG22B4R7MNE Samsung Electro-Mechanics
Description: FIXED IND 4.7UH 1A 250 MOHM SMD, Current Rating (Amps): 1 A, Inductance: 4.7 µH, Part Status: Obsolete, Height - Seated (Max): 0.031" (0.80mm), Supplier Device Package: 1008 (2520 Metric), Inductance Frequency - Test: 1 MHz, Current - Saturation (Isat): 650mA, DC Resistance (DCR): 250mOhm, Operating Temperature: -40°C ~ 125°C, Type: Multilayer, Shielding: Shielded, Mounting Type: Surface Mount, Size / Dimension: 0.098" L x 0.079" W (2.50mm x 2.00mm), Package / Case: 1008 (2520 Metric), Tolerance: ±20%, Packaging: Tape & Reel (TR).
Інші пропозиції CIG22B4R7MNE
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
|---|---|---|---|---|---|
|
CIG22B4R7MNE | Виробник : Samsung Electro-Mechanics |
Description: FIXED IND 4.7UH 1A 250 MOHM SMDCurrent Rating (Amps): 1 A Inductance: 4.7 µH Part Status: Obsolete Height - Seated (Max): 0.031" (0.80mm) Supplier Device Package: 1008 (2520 Metric) Inductance Frequency - Test: 1 MHz Current - Saturation (Isat): 650mA DC Resistance (DCR): 250mOhm Operating Temperature: -40°C ~ 125°C Type: Multilayer Shielding: Shielded Mounting Type: Surface Mount Size / Dimension: 0.098" L x 0.079" W (2.50mm x 2.00mm) Package / Case: 1008 (2520 Metric) Tolerance: ±20% Packaging: Cut Tape (CT) |
товару немає в наявності |