CMS07P10V8-HF Comchip Technology

Description: MOSFET P-CH 100V 2.2A/7A PRPAK, Input Capacitance (Ciss) (Max) @ Vds: 680 pF @ 15 V, Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 10 V, Drain to Source Voltage (Vdss): 100 V, Vgs (Max): ±20V, Supplier Device Package: PR-PAK (3x3), Vgs(th) (Max) @ Id: 4V @ 250µA, Power Dissipation (Max): 2.5W (Ta), 25W (Tc), Rds On (Max) @ Id, Vgs: 260mOhm @ 4A, 10V, Current - Continuous Drain (Id) @ 25°C: 2.2A (Ta), 7A (Tc), FET Type: P-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount, Package / Case: 8-PowerVDFN, Packaging: Tape & Reel (TR).