Coherent TM3B00 1200V SiC MOSFET
Виробник: Coherent
1200V SiC Power MOSFETs provide energy efficiency, high performance, and are available with a 200?C junction temperature capability. Offering fast switching enabled by ultra-low gate resistance & very low temperature invariant switching losses.
1200V SiC Power MOSFETs provide energy efficiency, high performance, and are available with a 200?C junction temperature capability. Offering fast switching enabled by ultra-low gate resistance & very low temperature invariant switching losses.
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Технічний опис Coherent TM3B00 1200V SiC MOSFET Coherent
1200V SiC Power MOSFETs provide energy efficiency, high performance, and are available with a 200?C junction temperature capability. Offering fast switching enabled by ultra-low gate resistance & very low temperature invariant switching losses..