CP127-2N6301-CT Central Semiconductor Corp
Виробник: Central Semiconductor Corp
Description: TRANS NPN DARL 80V 8A DIE 1=200
Voltage - Collector Emitter Breakdown (Max): 80 V
Current - Collector (Ic) (Max): 8 A
Part Status: Active
Supplier Device Package: Die
Frequency - Transition: 4MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 750 @ 4A, 3V
Current - Collector Cutoff (Max): 500µA
Vce Saturation (Max) @ Ib, Ic: 3V @ 80mA, 8A
Operating Temperature: -65°C ~ 200°C (TJ)
Transistor Type: NPN - Darlington
Mounting Type: Surface Mount
Package / Case: Die
Packaging: Tray
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Технічний опис CP127-2N6301-CT Central Semiconductor Corp
Description: TRANS NPN DARL 80V 8A DIE 1=200, Voltage - Collector Emitter Breakdown (Max): 80 V, Current - Collector (Ic) (Max): 8 A, Part Status: Active, Supplier Device Package: Die, Frequency - Transition: 4MHz, DC Current Gain (hFE) (Min) @ Ic, Vce: 750 @ 4A, 3V, Current - Collector Cutoff (Max): 500µA, Vce Saturation (Max) @ Ib, Ic: 3V @ 80mA, 8A, Operating Temperature: -65°C ~ 200°C (TJ), Transistor Type: NPN - Darlington, Mounting Type: Surface Mount, Package / Case: Die, Packaging: Tray.