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CP191V-2N2222A-CT Central Semiconductor Corp

CP191V.PDF Виробник: Central Semiconductor Corp
Description: TRANS NPN 40V 0.8A DIE
Packaging: Tray
Package / Case: Die
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA
Current - Collector Cutoff (Max): 10nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
Frequency - Transition: 300MHz
Supplier Device Package: Die
Current - Collector (Ic) (Max): 800 mA
Voltage - Collector Emitter Breakdown (Max): 40 V
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Технічний опис CP191V-2N2222A-CT Central Semiconductor Corp

Description: TRANS NPN 40V 0.8A DIE, Packaging: Tray, Package / Case: Die, Mounting Type: Surface Mount, Transistor Type: NPN, Operating Temperature: -65°C ~ 150°C (TJ), Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA, Current - Collector Cutoff (Max): 10nA (ICBO), DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V, Frequency - Transition: 300MHz, Supplier Device Package: Die, Current - Collector (Ic) (Max): 800 mA, Voltage - Collector Emitter Breakdown (Max): 40 V.