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CP225-2N2218A-WN Central Semiconductor Corp

CP225-2N2218A.PDF
Виробник: Central Semiconductor Corp
Description: TRANS NPN 40V 0.8A DIE
Power - Max: 800 mW
Voltage - Collector Emitter Breakdown (Max): 40 V
Current - Collector (Ic) (Max): 800 mA
Part Status: Obsolete
Supplier Device Package: Die
Frequency - Transition: 250MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 150mA, 10V
Current - Collector Cutoff (Max): 10nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA
Operating Temperature: -65°C ~ 200°C (TJ)
Transistor Type: NPN
Mounting Type: Surface Mount
Package / Case: Die
Packaging: Tape & Box (TB)
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Технічний опис CP225-2N2218A-WN Central Semiconductor Corp

Description: TRANS NPN 40V 0.8A DIE, Power - Max: 800 mW, Voltage - Collector Emitter Breakdown (Max): 40 V, Current - Collector (Ic) (Max): 800 mA, Part Status: Obsolete, Supplier Device Package: Die, Frequency - Transition: 250MHz, DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 150mA, 10V, Current - Collector Cutoff (Max): 10nA (ICBO), Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA, Operating Temperature: -65°C ~ 200°C (TJ), Transistor Type: NPN, Mounting Type: Surface Mount, Package / Case: Die, Packaging: Tape & Box (TB).