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CP302-MPSH10-CT Central Semiconductor Corp

CP302-MPSH10_R2_Apr3%2C2017_DS.pdf Виробник: Central Semiconductor Corp
Description: RF TRANS NPN 25V 650MHZ DIE
Packaging: Tray
Package / Case: Die
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -65°C ~ 150°C (TJ)
Power - Max: 350mW
Voltage - Collector Emitter Breakdown (Max): 25V
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 4mA, 10V
Frequency - Transition: 650MHz
Supplier Device Package: Die
Part Status: Obsolete
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Технічний опис CP302-MPSH10-CT Central Semiconductor Corp

Description: RF TRANS NPN 25V 650MHZ DIE, Packaging: Tray, Package / Case: Die, Mounting Type: Surface Mount, Transistor Type: NPN, Operating Temperature: -65°C ~ 150°C (TJ), Power - Max: 350mW, Voltage - Collector Emitter Breakdown (Max): 25V, DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 4mA, 10V, Frequency - Transition: 650MHz, Supplier Device Package: Die, Part Status: Obsolete.