Продукція > CENTRAL SEMICONDUCTOR CORP > CP337V-2N4013-CT20

CP337V-2N4013-CT20 Central Semiconductor Corp

CP337V-2N4013.PDF
Виробник: Central Semiconductor Corp
Description: TRANS NPN 30V 1A DIE
Power - Max: 360 mW
Voltage - Collector Emitter Breakdown (Max): 30 V
Current - Collector (Ic) (Max): 1 A
Part Status: Obsolete
Supplier Device Package: Die
Frequency - Transition: 300MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 100mA, 1V
Current - Collector Cutoff (Max): 10µA
Vce Saturation (Max) @ Ib, Ic: 750mV @ 100mA, 1A
Operating Temperature: -65°C ~ 150°C (TJ)
Transistor Type: NPN
Mounting Type: Surface Mount
Package / Case: Die
Packaging: Tray
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Технічний опис CP337V-2N4013-CT20 Central Semiconductor Corp

Description: TRANS NPN 30V 1A DIE, Power - Max: 360 mW, Voltage - Collector Emitter Breakdown (Max): 30 V, Current - Collector (Ic) (Max): 1 A, Part Status: Obsolete, Supplier Device Package: Die, Frequency - Transition: 300MHz, DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 100mA, 1V, Current - Collector Cutoff (Max): 10µA, Vce Saturation (Max) @ Ib, Ic: 750mV @ 100mA, 1A, Operating Temperature: -65°C ~ 150°C (TJ), Transistor Type: NPN, Mounting Type: Surface Mount, Package / Case: Die, Packaging: Tray.