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CP611-2N5955-CT Central Semiconductor Corp

CP611-2N5955_6-9-17.PDF
Виробник: Central Semiconductor Corp
Description: TRANSISTOR
Power - Max: 40 W
Voltage - Collector Emitter Breakdown (Max): 60 V
Supplier Device Package: Die
Frequency - Transition: 5MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 2.5A, 4V
Current - Collector Cutoff (Max): 1mA
Vce Saturation (Max) @ Ib, Ic: 2V @ 1.2A, 6A
Operating Temperature: -65°C ~ 150°C (TJ)
Transistor Type: PNP
Mounting Type: Surface Mount
Package / Case: Die
Packaging: Bulk
Current - Collector (Ic) (Max): 6 A
Part Status: Obsolete
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Технічний опис CP611-2N5955-CT Central Semiconductor Corp

Description: TRANSISTOR, Power - Max: 40 W, Voltage - Collector Emitter Breakdown (Max): 60 V, Supplier Device Package: Die, Frequency - Transition: 5MHz, DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 2.5A, 4V, Current - Collector Cutoff (Max): 1mA, Vce Saturation (Max) @ Ib, Ic: 2V @ 1.2A, 6A, Operating Temperature: -65°C ~ 150°C (TJ), Transistor Type: PNP, Mounting Type: Surface Mount, Package / Case: Die, Packaging: Bulk, Current - Collector (Ic) (Max): 6 A, Part Status: Obsolete.