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CP647-MJ11015-CT Central Semiconductor Corp

CP647-MJ11015_WPD.PDF
Виробник: Central Semiconductor Corp
Description: TRANS PNP DARL 120V 30A DIE
Current - Collector (Ic) (Max): 30 A
Part Status: Obsolete
Supplier Device Package: Die
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 30A, 5V
Current - Collector Cutoff (Max): 1mA
Vce Saturation (Max) @ Ib, Ic: 4V @ 300mA, 30A
Operating Temperature: -65°C ~ 150°C (TJ)
Transistor Type: PNP - Darlington
Mounting Type: Surface Mount
Package / Case: Die
Packaging: Tray
Voltage - Collector Emitter Breakdown (Max): 120 V
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Технічний опис CP647-MJ11015-CT Central Semiconductor Corp

Description: TRANS PNP DARL 120V 30A DIE, Current - Collector (Ic) (Max): 30 A, Part Status: Obsolete, Supplier Device Package: Die, DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 30A, 5V, Current - Collector Cutoff (Max): 1mA, Vce Saturation (Max) @ Ib, Ic: 4V @ 300mA, 30A, Operating Temperature: -65°C ~ 150°C (TJ), Transistor Type: PNP - Darlington, Mounting Type: Surface Mount, Package / Case: Die, Packaging: Tray, Voltage - Collector Emitter Breakdown (Max): 120 V.