Продукція > CENTRAL SEMICONDUCTOR CORP > CP647-PMD19K100-CT

CP647-PMD19K100-CT Central Semiconductor Corp

CP647-PMD19K100_6-13-16.pdf
Виробник: Central Semiconductor Corp
Description: TRANS PNP DARL 100V 30A DIE
Voltage - Collector Emitter Breakdown (Max): 100 V
Current - Collector (Ic) (Max): 30 A
Part Status: Active
Supplier Device Package: Die
Frequency - Transition: 4MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 800 @ 15A, 3V
Vce Saturation (Max) @ Ib, Ic: 2.8V @ 60mA, 15A
Operating Temperature: -65°C ~ 150°C (TJ)
Transistor Type: PNP - Darlington
Mounting Type: Surface Mount
Package / Case: Die
Packaging: Tray
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Технічний опис CP647-PMD19K100-CT Central Semiconductor Corp

Description: TRANS PNP DARL 100V 30A DIE, Voltage - Collector Emitter Breakdown (Max): 100 V, Current - Collector (Ic) (Max): 30 A, Part Status: Active, Supplier Device Package: Die, Frequency - Transition: 4MHz, DC Current Gain (hFE) (Min) @ Ic, Vce: 800 @ 15A, 3V, Vce Saturation (Max) @ Ib, Ic: 2.8V @ 60mA, 15A, Operating Temperature: -65°C ~ 150°C (TJ), Transistor Type: PNP - Darlington, Mounting Type: Surface Mount, Package / Case: Die, Packaging: Tray.