CP773-CMPDM302PH-CT Central Semiconductor Corp
Виробник: Central Semiconductor Corp
Description: MOSFET P-CH 30V 2.4A DIE
Input Capacitance (Ciss) (Max) @ Vds: 800 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 9.6 nC @ 5 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): 12V
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Supplier Device Package: Die
Vgs(th) (Max) @ Id: 1.4V @ 250µA
Rds On (Max) @ Id, Vgs: 91mOhm @ 1.2A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 2.4A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: Die
Packaging: Tray
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Технічний опис CP773-CMPDM302PH-CT Central Semiconductor Corp
Description: MOSFET P-CH 30V 2.4A DIE, Input Capacitance (Ciss) (Max) @ Vds: 800 pF @ 10 V, Gate Charge (Qg) (Max) @ Vgs: 9.6 nC @ 5 V, Drain to Source Voltage (Vdss): 30 V, Vgs (Max): 12V, Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V, Supplier Device Package: Die, Vgs(th) (Max) @ Id: 1.4V @ 250µA, Rds On (Max) @ Id, Vgs: 91mOhm @ 1.2A, 4.5V, Current - Continuous Drain (Id) @ 25°C: 2.4A (Ta), FET Type: P-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount, Package / Case: Die, Packaging: Tray.