CPD16-CMR1U-06M-CT Central Semiconductor Corp
Виробник: Central Semiconductor Corp
Description: DIODE GEN PURP 600V 1A DIE 1=400
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 1.4 V @ 1 A
Voltage - DC Reverse (Vr) (Max): 600 V
Operating Temperature - Junction: -65°C ~ 150°C
Supplier Device Package: Die
Current - Average Rectified (Io): 1A
Technology: Standard
Reverse Recovery Time (trr): 75 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: Die
Packaging: Tray
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Технічний опис CPD16-CMR1U-06M-CT Central Semiconductor Corp
Description: DIODE GEN PURP 600V 1A DIE 1=400, Current - Reverse Leakage @ Vr: 5 µA @ 600 V, Voltage - Forward (Vf) (Max) @ If: 1.4 V @ 1 A, Voltage - DC Reverse (Vr) (Max): 600 V, Operating Temperature - Junction: -65°C ~ 150°C, Supplier Device Package: Die, Current - Average Rectified (Io): 1A, Technology: Standard, Reverse Recovery Time (trr): 75 ns, Speed: Fast Recovery =< 500ns, > 200mA (Io), Mounting Type: Surface Mount, Package / Case: Die, Packaging: Tray.