CRH01(TE85L) Toshiba Semiconductor and Storage
Виробник: Toshiba Semiconductor and StorageDescription: DIODE SWITCHING 200V 1A SFLAT
Packaging: Cut Tape (CT)
Package / Case: SOD-123F
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Current - Average Rectified (Io): 1A
Supplier Device Package: S-FLAT (1.6x3.5)
Operating Temperature - Junction: -40°C ~ 150°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 980 mV @ 1 A
Current - Reverse Leakage @ Vr: 10 µA @ 200 V
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Технічний опис CRH01(TE85L) Toshiba Semiconductor and Storage
Description: DIODE SWITCHING 200V 1A SFLAT, Packaging: Cut Tape (CT), Package / Case: SOD-123F, Mounting Type: Surface Mount, Speed: Fast Recovery =< 500ns, > 200mA (Io), Reverse Recovery Time (trr): 35 ns, Technology: Standard, Current - Average Rectified (Io): 1A, Supplier Device Package: S-FLAT (1.6x3.5), Operating Temperature - Junction: -40°C ~ 150°C, Part Status: Obsolete, Voltage - DC Reverse (Vr) (Max): 200 V, Voltage - Forward (Vf) (Max) @ If: 980 mV @ 1 A, Current - Reverse Leakage @ Vr: 10 µA @ 200 V.