CRH01(TE85L) Toshiba Semiconductor and Storage
Виробник: Toshiba Semiconductor and Storage
Description: DIODE STANDARD 200V 1A SFLAT
Current - Reverse Leakage @ Vr: 10 µA @ 200 V
Voltage - Forward (Vf) (Max) @ If: 980 mV @ 1 A
Voltage - DC Reverse (Vr) (Max): 200 V
Part Status: Obsolete
Operating Temperature - Junction: -40°C ~ 150°C
Supplier Device Package: S-FLAT (1.6x3.5)
Current - Average Rectified (Io): 1A
Technology: Standard
Reverse Recovery Time (trr): 35 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: SOD-123F
Packaging: Cut Tape (CT)
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Технічний опис CRH01(TE85L) Toshiba Semiconductor and Storage
Description: DIODE STANDARD 200V 1A SFLAT, Current - Reverse Leakage @ Vr: 10 µA @ 200 V, Voltage - Forward (Vf) (Max) @ If: 980 mV @ 1 A, Voltage - DC Reverse (Vr) (Max): 200 V, Part Status: Obsolete, Operating Temperature - Junction: -40°C ~ 150°C, Supplier Device Package: S-FLAT (1.6x3.5), Current - Average Rectified (Io): 1A, Technology: Standard, Reverse Recovery Time (trr): 35 ns, Speed: Fast Recovery =< 500ns, > 200mA (Io), Mounting Type: Surface Mount, Package / Case: SOD-123F, Packaging: Cut Tape (CT).