Технічний опис CSD75211W1723 Texas Instruments
Description: MOSFET 2P-CH 20V 4.5A 12DSBGA, Packaging: Tape & Reel (TR), Package / Case: 12-UFBGA, DSBGA, Mounting Type: Surface Mount, Configuration: 2 P-Channel (Dual), Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 1.5W, Drain to Source Voltage (Vdss): 20V, Current - Continuous Drain (Id) @ 25°C: 4.5A, Input Capacitance (Ciss) (Max) @ Vds: 600pF @ 10V, Rds On (Max) @ Id, Vgs: 40mOhm @ 2A, 4.5V, Gate Charge (Qg) (Max) @ Vgs: 5.9nC @ 4.5V, FET Feature: Logic Level Gate, Vgs(th) (Max) @ Id: 1.1V @ 250µA, Supplier Device Package: 12-DSBGA.
Інші пропозиції CSD75211W1723
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CSD75211W1723 | Виробник : Texas Instruments |
![]() Packaging: Tape & Reel (TR) Package / Case: 12-UFBGA, DSBGA Mounting Type: Surface Mount Configuration: 2 P-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 1.5W Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 4.5A Input Capacitance (Ciss) (Max) @ Vds: 600pF @ 10V Rds On (Max) @ Id, Vgs: 40mOhm @ 2A, 4.5V Gate Charge (Qg) (Max) @ Vgs: 5.9nC @ 4.5V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 1.1V @ 250µA Supplier Device Package: 12-DSBGA |
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