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CSIC10-1200 SL

CSIC10-1200 SL Central Semiconductor Corp

CSIC10-1200.PDF
Виробник: Central Semiconductor Corp
Description: DIODE SIL CARB 1.2KV 10A TO220-2
Current - Reverse Leakage @ Vr: 400 µA @ 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 10 A
Voltage - DC Reverse (Vr) (Max): 1200 V
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: TO-220-2
Current - Average Rectified (Io): 10A
Capacitance @ Vr, F: 41pF @ 600V, 1MHz
Technology: SiC (Silicon Carbide) Schottky
Reverse Recovery Time (trr): 0 ns
Speed: No Recovery Time > 500mA (Io)
Mounting Type: Through Hole
Package / Case: TO-220-2
Packaging: Tube
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Технічний опис CSIC10-1200 SL Central Semiconductor Corp

Description: DIODE SIL CARB 1.2KV 10A TO220-2, Current - Reverse Leakage @ Vr: 400 µA @ 1200 V, Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 10 A, Voltage - DC Reverse (Vr) (Max): 1200 V, Operating Temperature - Junction: -55°C ~ 175°C, Supplier Device Package: TO-220-2, Current - Average Rectified (Io): 10A, Capacitance @ Vr, F: 41pF @ 600V, 1MHz, Technology: SiC (Silicon Carbide) Schottky, Reverse Recovery Time (trr): 0 ns, Speed: No Recovery Time > 500mA (Io), Mounting Type: Through Hole, Package / Case: TO-220-2, Packaging: Tube.