CTLDM3590 TR Central Semiconductor Corp
Виробник: Central Semiconductor CorpDescription: MOSFET N-CH 20V 160MA TLM3D6D8
Packaging: Tape & Reel (TR)
Package / Case: 3-XFDFN
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 160mA (Ta)
Rds On (Max) @ Id, Vgs: 3Ohm @ 100mA, 4.5V
Power Dissipation (Max): 125mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: TLM3D6D8
Drive Voltage (Max Rds On, Min Rds On): 1.2V, 4.5V
Vgs (Max): 8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 0.46 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 9 pF @ 15 V
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Технічний опис CTLDM3590 TR Central Semiconductor Corp
Description: MOSFET N-CH 20V 160MA TLM3D6D8, Packaging: Tape & Reel (TR), Package / Case: 3-XFDFN, Mounting Type: Surface Mount, Operating Temperature: -65°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 160mA (Ta), Rds On (Max) @ Id, Vgs: 3Ohm @ 100mA, 4.5V, Power Dissipation (Max): 125mW (Ta), Vgs(th) (Max) @ Id: 1V @ 250µA, Supplier Device Package: TLM3D6D8, Drive Voltage (Max Rds On, Min Rds On): 1.2V, 4.5V, Vgs (Max): 8V, Drain to Source Voltage (Vdss): 20 V, Gate Charge (Qg) (Max) @ Vgs: 0.46 nC @ 4.5 V, Input Capacitance (Ciss) (Max) @ Vds: 9 pF @ 15 V.