CTLDM3590 TR Central Semiconductor Corp

Description: MOSFET N-CH 20V 160MA TLM3D6D8, Input Capacitance (Ciss) (Max) @ Vds: 9 pF @ 15 V, Gate Charge (Qg) (Max) @ Vgs: 0.46 nC @ 4.5 V, Drain to Source Voltage (Vdss): 20 V, Vgs (Max): 8V, Drive Voltage (Max Rds On, Min Rds On): 1.2V, 4.5V, Supplier Device Package: TLM3D6D8, Vgs(th) (Max) @ Id: 1V @ 250µA, Power Dissipation (Max): 125mW (Ta), Rds On (Max) @ Id, Vgs: 3Ohm @ 100mA, 4.5V, Current - Continuous Drain (Id) @ 25°C: 160mA (Ta), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -65°C ~ 150°C (TJ), Mounting Type: Surface Mount, Package / Case: 3-XFDFN, Packaging: Tape & Reel (TR).