CTLM8110-M832D BK Central Semiconductor Corp
Виробник: Central Semiconductor Corp
Description: TRANSISTOR
Input Capacitance (Ciss) (Max) @ Vds: 200 pF @ 16 V
Gate Charge (Qg) (Max) @ Vgs: 3.56 nC @ 4.5 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): 8V
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Supplier Device Package: TLM832D
Vgs(th) (Max) @ Id: 1V @ 250µA
Power Dissipation (Max): 1.65W (Ta)
FET Feature: Schottky Diode (Isolated)
Rds On (Max) @ Id, Vgs: 240mOhm @ 200mA, 1.8V
Current - Continuous Drain (Id) @ 25°C: 860mA (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -65°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-TDFN Exposed Pad
Packaging: Bulk
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Технічний опис CTLM8110-M832D BK Central Semiconductor Corp
Description: TRANSISTOR, Input Capacitance (Ciss) (Max) @ Vds: 200 pF @ 16 V, Gate Charge (Qg) (Max) @ Vgs: 3.56 nC @ 4.5 V, Drain to Source Voltage (Vdss): 20 V, Vgs (Max): 8V, Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V, Supplier Device Package: TLM832D, Vgs(th) (Max) @ Id: 1V @ 250µA, Power Dissipation (Max): 1.65W (Ta), FET Feature: Schottky Diode (Isolated), Rds On (Max) @ Id, Vgs: 240mOhm @ 200mA, 1.8V, Current - Continuous Drain (Id) @ 25°C: 860mA (Ta), FET Type: P-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -65°C ~ 150°C (TJ), Mounting Type: Surface Mount, Package / Case: 8-TDFN Exposed Pad, Packaging: Bulk.