CTLM8110-M832D TR Central Semiconductor Corp


CTLM8110-M832D_8-2-11.PDF Виробник: Central Semiconductor Corp
Description: TRANSISTOR
Packaging: Tape & Reel (TR)
Package / Case: 8-TDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 860mA (Ta)
Rds On (Max) @ Id, Vgs: 240mOhm @ 200mA, 1.8V
FET Feature: Schottky Diode (Isolated)
Power Dissipation (Max): 1.65W (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: TLM832D
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): 8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 3.56 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 200 pF @ 16 V
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Технічний опис CTLM8110-M832D TR Central Semiconductor Corp

Description: TRANSISTOR, Packaging: Tape & Reel (TR), Package / Case: 8-TDFN Exposed Pad, Mounting Type: Surface Mount, Operating Temperature: -65°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 860mA (Ta), Rds On (Max) @ Id, Vgs: 240mOhm @ 200mA, 1.8V, FET Feature: Schottky Diode (Isolated), Power Dissipation (Max): 1.65W (Ta), Vgs(th) (Max) @ Id: 1V @ 250µA, Supplier Device Package: TLM832D, Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V, Vgs (Max): 8V, Drain to Source Voltage (Vdss): 20 V, Gate Charge (Qg) (Max) @ Vgs: 3.56 nC @ 4.5 V, Input Capacitance (Ciss) (Max) @ Vds: 200 pF @ 16 V.