Технічний опис D1230N16TXPSA1 Infineon Technologies
Description: DIODE GEN PURP 1.6KV 1230A, Packaging: Tray, Package / Case: DO-200AA, A-PUK, Mounting Type: Clamp On, Speed: Standard Recovery >500ns, > 200mA (Io), Technology: Standard, Current - Average Rectified (Io): 1230A, Operating Temperature - Junction: -40°C ~ 180°C, Part Status: Last Time Buy, Voltage - DC Reverse (Vr) (Max): 1600 V, Voltage - Forward (Vf) (Max) @ If: 1.063 V @ 800 A, Current - Reverse Leakage @ Vr: 50 mA @ 1600 V.
Інші пропозиції D1230N16TXPSA1
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
|---|---|---|---|---|---|
| D1230N16TXPSA1 | Виробник : Infineon Technologies |
 Description: DIODE GEN PURP 1.6KV 1230APackaging: Tray Package / Case: DO-200AA, A-PUK Mounting Type: Clamp On Speed: Standard Recovery >500ns, > 200mA (Io) Technology: Standard Current - Average Rectified (Io): 1230A Operating Temperature - Junction: -40°C ~ 180°C Part Status: Last Time Buy Voltage - DC Reverse (Vr) (Max): 1600 V Voltage - Forward (Vf) (Max) @ If: 1.063 V @ 800 A Current - Reverse Leakage @ Vr: 50 mA @ 1600 V |
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