Технічний опис D2601NH90TXPSA1 Infineon Technologies
Description: DIODE GEN PURP 9KV 1790A, Packaging: Tray, Package / Case: DO-200AE, Mounting Type: Chassis Mount, Speed: Standard Recovery >500ns, > 200mA (Io), Technology: Standard, Current - Average Rectified (Io): 1790A, Operating Temperature - Junction: 0°C ~ 140°C, Voltage - DC Reverse (Vr) (Max): 9000 V, Voltage - Forward (Vf) (Max) @ If: 5.5 V @ 4000 A, Current - Reverse Leakage @ Vr: 150 mA @ 9000 V.
Інші пропозиції D2601NH90TXPSA1
| Фото | Назва | Виробник | Інформація |
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D2601NH90TXPSA1 | Виробник : Infineon Technologies |
 Description: DIODE GEN PURP 9KV 1790APackaging: Tray Package / Case: DO-200AE Mounting Type: Chassis Mount Speed: Standard Recovery >500ns, > 200mA (Io) Technology: Standard Current - Average Rectified (Io): 1790A Operating Temperature - Junction: 0°C ~ 140°C Voltage - DC Reverse (Vr) (Max): 9000 V Voltage - Forward (Vf) (Max) @ If: 5.5 V @ 4000 A Current - Reverse Leakage @ Vr: 150 mA @ 9000 V |
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