D2SB10 D2G Taiwan Semiconductor Corporation
Виробник: Taiwan Semiconductor Corporation
Description: BRIDGE RECT 1PHASE 100V 2A GBL
Current - Reverse Leakage @ Vr: 10 µA @ 100 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 2 A
Current - Average Rectified (Io): 2 A
Voltage - Peak Reverse (Max): 100 V
Part Status: Active
Supplier Device Package: GBL
Technology: Standard
Operating Temperature: -55°C ~ 150°C (TJ)
Diode Type: Single Phase
Mounting Type: Through Hole
Package / Case: 4-SIP, GBL
Packaging: Tube
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Технічний опис D2SB10 D2G Taiwan Semiconductor Corporation
Description: BRIDGE RECT 1PHASE 100V 2A GBL, Current - Reverse Leakage @ Vr: 10 µA @ 100 V, Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 2 A, Current - Average Rectified (Io): 2 A, Voltage - Peak Reverse (Max): 100 V, Part Status: Active, Supplier Device Package: GBL, Technology: Standard, Operating Temperature: -55°C ~ 150°C (TJ), Diode Type: Single Phase, Mounting Type: Through Hole, Package / Case: 4-SIP, GBL, Packaging: Tube.