Технічний опис D650N08TXPSA1 Infineon Technologies
Description: DIODE GEN PURP 800V 650A, Packaging: Bulk, Package / Case: DO-200AA, A-PUK, Mounting Type: Clamp On, Speed: Standard Recovery >500ns, > 200mA (Io), Technology: Standard, Current - Average Rectified (Io): 650A, Operating Temperature - Junction: -40°C ~ 180°C, Voltage - DC Reverse (Vr) (Max): 800 V, Voltage - Forward (Vf) (Max) @ If: 950 mV @ 450 A, Current - Reverse Leakage @ Vr: 20 mA @ 800 V.
Інші пропозиції D650N08TXPSA1
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D650N08TXPSA1 | Виробник : Infineon Technologies |
 Description: DIODE GEN PURP 800V 650APackaging: Bulk Package / Case: DO-200AA, A-PUK Mounting Type: Clamp On Speed: Standard Recovery >500ns, > 200mA (Io) Technology: Standard Current - Average Rectified (Io): 650A Operating Temperature - Junction: -40°C ~ 180°C Voltage - DC Reverse (Vr) (Max): 800 V Voltage - Forward (Vf) (Max) @ If: 950 mV @ 450 A Current - Reverse Leakage @ Vr: 20 mA @ 800 V |
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