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DAA10P1800PZ-TUB

DAA10P1800PZ-TUB IXYS

Littelfuse_Power_Semiconductors_DAA10P1800PZ_Datasheet.pdf
Виробник: IXYS
Rectifiers Power Diode Discretes-Rectifier TO-263D2
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Технічний опис DAA10P1800PZ-TUB IXYS

Category: SMD universal diodes, Description: Diode: rectifying; SMD; 1.8kV; 10A; TO263ABHV; Ufmax: 1.53V; 100W, Max. forward voltage: 1.53V, Load current: 10A, Max. forward impulse current: 150A, Power dissipation: 100W, Max. off-state voltage: 1.8kV, Features of semiconductor devices: avalanche breakdown effect, Case: TO263ABHV, Semiconductor structure: double series, Type of diode: rectifying, Kind of package: tube, Mounting: SMD.

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DAA10P1800PZ-TUB DAA10P1800PZ-TUB IXYS DAA10P1800PZ.pdf Category: SMD universal diodes
Description: Diode: rectifying; SMD; 1.8kV; 10A; TO263ABHV; Ufmax: 1.53V; 100W
Max. forward voltage: 1.53V
Load current: 10A
Max. forward impulse current: 150A
Power dissipation: 100W
Max. off-state voltage: 1.8kV
Features of semiconductor devices: avalanche breakdown effect
Case: TO263ABHV
Semiconductor structure: double series
Type of diode: rectifying
Kind of package: tube
Mounting: SMD
товару немає в наявності
В кошику  од. на суму  грн.
DAA10P1800PZ-TUB DAA10P1800PZ.pdf
DAA10P1800PZ-TUB
Виробник: IXYS
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 1.8kV; 10A; TO263ABHV; Ufmax: 1.53V; 100W
Max. forward voltage: 1.53V
Load current: 10A
Max. forward impulse current: 150A
Power dissipation: 100W
Max. off-state voltage: 1.8kV
Features of semiconductor devices: avalanche breakdown effect
Case: TO263ABHV
Semiconductor structure: double series
Type of diode: rectifying
Kind of package: tube
Mounting: SMD
товару немає в наявності
В кошику  од. на суму  грн.