
DACMH120N1200 DACO Semiconductor

Category: Transistor modules MOSFET
Description: Module; transistor/transistor; 1.2kV; 76A; HB9434; screw; Idm: 300A
Case: HB9434
Operating temperature: -55...150°C
Power dissipation: 500W
Polarisation: unipolar
Electrical mounting: screw
Mechanical mounting: screw
Type of module: MOSFET transistor
Technology: SiC
Gate-source voltage: -10...20V
Topology: MOSFET half-bridge
Pulsed drain current: 300A
Semiconductor structure: transistor/transistor
Drain-source voltage: 1.2kV
Drain current: 76A
On-state resistance: 25mΩ
кількість в упаковці: 1 шт
товару немає в наявності
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Технічний опис DACMH120N1200 DACO Semiconductor
Category: Transistor modules MOSFET, Description: Module; transistor/transistor; 1.2kV; 76A; HB9434; screw; Idm: 300A, Case: HB9434, Operating temperature: -55...150°C, Power dissipation: 500W, Polarisation: unipolar, Electrical mounting: screw, Mechanical mounting: screw, Type of module: MOSFET transistor, Technology: SiC, Gate-source voltage: -10...20V, Topology: MOSFET half-bridge, Pulsed drain current: 300A, Semiconductor structure: transistor/transistor, Drain-source voltage: 1.2kV, Drain current: 76A, On-state resistance: 25mΩ, кількість в упаковці: 1 шт.
Інші пропозиції DACMH120N1200
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DACMH120N1200 | Виробник : DACO Semiconductor |
![]() Description: Module; transistor/transistor; 1.2kV; 76A; HB9434; screw; Idm: 300A Case: HB9434 Operating temperature: -55...150°C Power dissipation: 500W Polarisation: unipolar Electrical mounting: screw Mechanical mounting: screw Type of module: MOSFET transistor Technology: SiC Gate-source voltage: -10...20V Topology: MOSFET half-bridge Pulsed drain current: 300A Semiconductor structure: transistor/transistor Drain-source voltage: 1.2kV Drain current: 76A On-state resistance: 25mΩ |
товару немає в наявності |