DACMH120N1200

DACMH120N1200 DACO Semiconductor


DACMH120N1200.pdf
Виробник: DACO Semiconductor
Category: Transistor modules MOSFET
Description: Module; transistor/transistor; 1.2kV; 76A; HB9434; screw; Idm: 300A
Type of semiconductor module: MOSFET transistor
Semiconductor structure: transistor/transistor
Drain-source voltage: 1.2kV
Drain current: 76A
Case: HB9434
Topology: MOSFET half-bridge
Electrical mounting: screw
Polarisation: unipolar
On-state resistance: 25mΩ
Pulsed drain current: 300A
Power dissipation: 500W
Technology: SiC
Gate-source voltage: -10...20V
Operating temperature: -55...150°C
Mechanical mounting: screw
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Технічний опис DACMH120N1200 DACO Semiconductor

Category: Transistor modules MOSFET, Description: Module; transistor/transistor; 1.2kV; 76A; HB9434; screw; Idm: 300A, Type of semiconductor module: MOSFET transistor, Semiconductor structure: transistor/transistor, Drain-source voltage: 1.2kV, Drain current: 76A, Case: HB9434, Topology: MOSFET half-bridge, Electrical mounting: screw, Polarisation: unipolar, On-state resistance: 25mΩ, Pulsed drain current: 300A, Power dissipation: 500W, Technology: SiC, Gate-source voltage: -10...20V, Operating temperature: -55...150°C, Mechanical mounting: screw.