DACMH160N1200

DACMH160N1200 DACO Semiconductor


DACMH160N1200.pdf
Виробник: DACO Semiconductor
Category: Transistor modules MOSFET
Description: Module; transistor/transistor; 1.2kV; 110A; HB9434; screw; 580W
Type of semiconductor module: MOSFET transistor
Semiconductor structure: transistor/transistor
Drain-source voltage: 1.2kV
Drain current: 110A
Case: HB9434
Electrical mounting: screw
Polarisation: unipolar
On-state resistance: 20mΩ
Pulsed drain current: 400A
Power dissipation: 580W
Technology: SiC
Gate-source voltage: -5...20V
Mechanical mounting: screw
Operating temperature: -55...150°C
Topology: MOSFET half-bridge
на замовлення 3 шт:

термін постачання 14-30 дні (днів)
Кількість Ціна
1+13369.01 грн
3+11640.20 грн
В кошику  од. на суму  грн.
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Технічний опис DACMH160N1200 DACO Semiconductor

Category: Transistor modules MOSFET, Description: Module; transistor/transistor; 1.2kV; 110A; HB9434; screw; 580W, Type of semiconductor module: MOSFET transistor, Semiconductor structure: transistor/transistor, Drain-source voltage: 1.2kV, Drain current: 110A, Case: HB9434, Electrical mounting: screw, Polarisation: unipolar, On-state resistance: 20mΩ, Pulsed drain current: 400A, Power dissipation: 580W, Technology: SiC, Gate-source voltage: -5...20V, Mechanical mounting: screw, Operating temperature: -55...150°C, Topology: MOSFET half-bridge.