DACMH160N1200 DACO Semiconductor


DACMH160N1200.pdf
Виробник: DACO Semiconductor
Category: Transistor modules
Description: Module; transistor/transistor; 1.2kV; 110A; HB9434; screw; 580W
Polarisation: unipolar
Topology: MOSFET half-bridge
Pulsed drain current: 400A
Type of semiconductor module: MOSFET transistor
Power dissipation: 580W
Operating temperature: -55...150°C
Technology: SiC
Drain current: 110A
Drain-source voltage: 1.2kV
Mechanical mounting: screw
Electrical mounting: screw
Gate-source voltage: -5...20V
Semiconductor structure: transistor/transistor
Case: HB9434
On-state resistance: 20mΩ
на замовлення 3 шт:
термін постачання 14-30 дні (днів)
КількістьЦіна без ПДВ
1+12350.25 грн
В кошику  од. на суму  грн.
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Технічний опис DACMH160N1200 DACO Semiconductor

Category: Transistor modules, Description: Module; transistor/transistor; 1.2kV; 110A; HB9434; screw; 580W, Polarisation: unipolar, Topology: MOSFET half-bridge, Pulsed drain current: 400A, Type of semiconductor module: MOSFET transistor, Power dissipation: 580W, Operating temperature: -55...150°C, Technology: SiC, Drain current: 110A, Drain-source voltage: 1.2kV, Mechanical mounting: screw, Electrical mounting: screw, Gate-source voltage: -5...20V, Semiconductor structure: transistor/transistor, Case: HB9434, On-state resistance: 20mΩ.