DACMH200N1200 DACO Semiconductor


pVersion=0046&contRep=ZT&docId=005056AB752F1ED88395B5ED54D62A18&compId=DACMH200N1200.pdf?ci_sign=082e5c8072ced3af87f5fbf4cdd997ebf1b5487d Виробник: DACO Semiconductor
Category: Transistor modules MOSFET
Description: Module; transistor/transistor; 1.2kV; 125A; HB9434; screw; 980W
Type of semiconductor module: MOSFET transistor
Semiconductor structure: transistor/transistor
Drain-source voltage: 1.2kV
Drain current: 125A
Case: HB9434
Topology: MOSFET half-bridge
Electrical mounting: screw
Polarisation: unipolar
On-state resistance: 15mΩ
Pulsed drain current: 500A
Power dissipation: 980W
Technology: SiC
Gate-source voltage: -10...20V
Operating temperature: -55...150°C
Mechanical mounting: screw
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Технічний опис DACMH200N1200 DACO Semiconductor

Category: Transistor modules MOSFET, Description: Module; transistor/transistor; 1.2kV; 125A; HB9434; screw; 980W, Type of semiconductor module: MOSFET transistor, Semiconductor structure: transistor/transistor, Drain-source voltage: 1.2kV, Drain current: 125A, Case: HB9434, Topology: MOSFET half-bridge, Electrical mounting: screw, Polarisation: unipolar, On-state resistance: 15mΩ, Pulsed drain current: 500A, Power dissipation: 980W, Technology: SiC, Gate-source voltage: -10...20V, Operating temperature: -55...150°C, Mechanical mounting: screw.