
DACMH80N1200 DACO Semiconductor

Category: Transistor modules MOSFET
Description: Module; transistor/transistor; 1.2kV; 50A; HB9434; screw; Idm: 250A
Type of semiconductor module: MOSFET transistor
Semiconductor structure: transistor/transistor
Case: HB9434
Electrical mounting: screw
Mechanical mounting: screw
Polarisation: unipolar
Operating temperature: -55...150°C
Gate-source voltage: -10...20V
On-state resistance: 34mΩ
Drain current: 50A
Drain-source voltage: 1.2kV
Pulsed drain current: 250A
Power dissipation: 460W
Topology: MOSFET half-bridge
Technology: SiC
кількість в упаковці: 1 шт
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Технічний опис DACMH80N1200 DACO Semiconductor
Category: Transistor modules MOSFET, Description: Module; transistor/transistor; 1.2kV; 50A; HB9434; screw; Idm: 250A, Type of semiconductor module: MOSFET transistor, Semiconductor structure: transistor/transistor, Case: HB9434, Electrical mounting: screw, Mechanical mounting: screw, Polarisation: unipolar, Operating temperature: -55...150°C, Gate-source voltage: -10...20V, On-state resistance: 34mΩ, Drain current: 50A, Drain-source voltage: 1.2kV, Pulsed drain current: 250A, Power dissipation: 460W, Topology: MOSFET half-bridge, Technology: SiC, кількість в упаковці: 1 шт.
Інші пропозиції DACMH80N1200
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DACMH80N1200 | Виробник : DACO Semiconductor |
![]() Description: Module; transistor/transistor; 1.2kV; 50A; HB9434; screw; Idm: 250A Type of semiconductor module: MOSFET transistor Semiconductor structure: transistor/transistor Case: HB9434 Electrical mounting: screw Mechanical mounting: screw Polarisation: unipolar Operating temperature: -55...150°C Gate-source voltage: -10...20V On-state resistance: 34mΩ Drain current: 50A Drain-source voltage: 1.2kV Pulsed drain current: 250A Power dissipation: 460W Topology: MOSFET half-bridge Technology: SiC |
товару немає в наявності |