DACMI120N1200 DACO Semiconductor

Category: Transistor modules MOSFET, Description: Module; single transistor; 1.2kV; 76A; SOT227B; screw; Idm: 300A, Technology: SiC, Polarisation: unipolar, Drain-source voltage: 1.2kV, Drain current: 76A, Pulsed drain current: 300A, Power dissipation: 500W, Case: SOT227B, Gate-source voltage: -10...20V, On-state resistance: 25mΩ, Semiconductor structure: single transistor, Operating temperature: -55...150°C, Electrical mounting: screw, Mechanical mounting: screw, Type of module: MOSFET transistor, кількість в упаковці: 1 шт.